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SI3456DV
June 2002
SI3456DV
N-Channel PowerTrenchO MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
* 5.1 A, 30 V. RDS(ON) = 45 mW @ VGS = 10 V RDS(ON) = 65 mW @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON) * Low gate charge * High power and current handling capability
D
D
S
1 2
G
6 5 4
SuperSOT TM -6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W C
5.1 20 1.6 0.8 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RqJA RqJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
C/W
Package Marking and Ordering Information
Device Marking .456 Device SI3456DV Reel Size 7'' Tape width 8mm Quantity 3000 units
O2002 Fairchild Semiconductor Corporation
SI3456DV Rev B
SI3456DV
Electrical Characteristics
Symbol
BVDSS DBVDSS DTJ IDSS IGSS VGS(th) DVGS(th) DTJ RDS(on) ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 mA
Min Typ
30 25
Max
Units
V mV/C
Off Characteristics
ID = 250 mA, Referenced to 25C VDS = 30 V, VGS = 20 V, VDS = VGS, VGS = 0 V TJ=70C VDS = 0 V ID = 250 mA 1 1.5 -4 33 44 49 15 12 463 109 44 VGS = 15 mV, f = 1.0 MHz
(Note 2)
1 5 100 2
mA nA V mV/
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
ID = 250 mA, Referenced to 25C ID = 5.1 A VGS = 10 V, ID = 4.3 A VGS = 4.5 V, VGS = 10 V, ID = 5.1 A, TJ=125C VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 5.1 A
45 65 71
mW
A S pF pF pF W 13 12 36 4.6 12.6 nS nS nS nS nC nC nC 1.3 A V nS nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
1.1 6.3 6 20 2.3
Switching Characteristics
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6 W
VDS = 15 V, VGS = 10 V
ID = 5.1 A,
9 1.4 1.6
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage Diode Reverse Recovery Time IF = 5.1A diF/dt = 100 A/s Diode Reverse Recovery Charge
(Note 2)
0.77 18 17
1.2
(Note 2)
Notes: 1. RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. 78C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. 156C/W when mounted on a minimum pad. a. b.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
SI3456DV Rev B
SI3456DV
Typical Characteristics
20
2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V 6.0V 4.5V 3.5V
2.2 2 1.8 1.6 1.4 1.2 1 0.8
VGS = 3.0V
ID, DRAIN CURRENT (A)
15
3.5V 4.0V 4.5V 6.0V 10V
10
3.0V
5 2.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (V)
0
5
10 ID, DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.14 ID = 2.5A RDS(ON), ON-RESISTANCE (OHM) 0.12 0.1 0.08 0.06 TA = 25oC 0.04 0.02
2 4 6 8 10
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5.1A VGS =10V 1.4
1.2
1
TA = 125oC
0.8
0.6 -50 -25 0 25 50 75 100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
20
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A) 15
TA = -55oC
25oC
VGS = 0V
10 1 0.1 0.01 0.001 0.0001
125oC
10
TA = 125oC 25oC -55oC
5
0 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
SI3456DV Rev B
SI3456DV
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
700 ID = 5.1A VDS = 10V 20V 15V CAPACITANCE (pF) 600 CISS 500 400 300 200 100 CRSS 0
0 2 4 6 8 10
8
f = 1MHz VGS = 0 V
6
4
2
COSS
0 Qg, GATE CHARGE (nC)
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10ms 1 10s VGS = 10V SINGLE PULSE RqJA = 156oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 1ms 100us 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RqJA = 156C/W TA = 25C
30
20
0.1
10
0 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RqJA(t) = r(t) * RqJA RqJA =156 C/W P(pk) t1 t2 TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.2
0.1
0.1 0.05 0.02 0.01
0.01 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
SI3456DV Rev B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST (R)
DISCLAIMER
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGIC (R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H7

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